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LL4448 Small Signal Diodes MiniMELF FEATURES Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case .063 (1.6) .055 (1.4) especially suited for automatic insertion. styles including: the DO-35 case with the type designation 1N4448, the SOD-123 case with the type designation 1N4448W, and the SOT-23 case with the type designation IMBD4448. Cathode Mark This diode is also available in other case .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f 50 Hz Surge Forward Current at t < 1 s and Tj = 25 C Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR VRM I0 IFSM Ptot Tj TS 500 5001) 175 -65 to +175 mA mW C C Valid provided that electrodes are kept at ambient temperature. 4/98 LL4448 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 5 mA at IF = 100 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 C Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. 0.62 - - - - - - - 0.45 Typ. - - - - - - - - - Max. 0.72 1 25 5 50 4 4 0.351) - Unit V V nA A A pF ns K/mW - VF VF IR IR IR Ctot trr RthJA v Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES LL4448 RATINGS AND CHARACTERISTIC CURVES LL4448 |
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