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 LL4448
Small Signal Diodes
MiniMELF
FEATURES Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case
.063 (1.6) .055 (1.4)
especially suited for automatic insertion. styles including: the DO-35 case with the type designation 1N4448, the SOD-123 case with the type designation 1N4448W, and the SOT-23 case with the type designation IMBD4448.
Cathode Mark
This diode is also available in other case
.142 (3.6) .134 (3.4)
.019 (0.48) .011 (0.28)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f 50 Hz Surge Forward Current at t < 1 s and Tj = 25 C Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range
1)
Value 75 100 1501)
Unit V V mA
VR VRM I0
IFSM Ptot Tj TS
500 5001) 175 -65 to +175
mA mW C C
Valid provided that electrodes are kept at ambient temperature.
4/98
LL4448
ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
Symbol Forward Voltage at IF = 5 mA at IF = 100 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 C Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
1)
Min. 0.62 - - - - - - - 0.45
Typ. - - - - - - - - -
Max. 0.72 1 25 5 50 4 4 0.351) -
Unit V V nA A A pF ns K/mW -
VF VF IR IR IR Ctot trr RthJA v
Valid provided that electrodes are kept at ambient temperature.
Rectification Efficiency Measurement Circuit
RATINGS AND CHARACTERISTIC CURVES LL4448
RATINGS AND CHARACTERISTIC CURVES LL4448


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